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Si2305DS
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Limits
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V (BR)DSS
V GS(th)
V GS = 0 V, I D = - 10 μA
V DS = V GS , I D = - 250 μA
-8
- 0.45
- 0.8
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 8 V, V GS = 0 V
V DS = - 8 V, V GS = 0 V, T J = 55 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V DS ≤ - 5 V, V GS = - 2.5 V
V GS = - 4.5 V, I D = - 3.5 A
-6
-3
0.044
± 100
-1
- 10
0.052
nA
μA
A
Drain-Source
On-Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 3 A
0.060
0.071
Ω
V GS = - 1.8 V, I D = - 2 A
0.087
0.108
Forward Transconductance a
Diode Forward Voltage
g fs
V SD
V DS = - 5 V, I D = - 3.5 A
I S = - 1.6 A, V GS = 0 V
8.5
- 1.2
S
V
Dynamic b
Total Gate Charge
Q g
10
15
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q gs
Q gd
C iss
C oss
C rss
V DS = - 4 V, V GS = - 4.5 V, I D ? - 3.5 A
V DS = - 4 V, V GS = 0 V, f = 1 MHz
2
2
1245
375
210
nC
pF
Switching
b
Turn-On Time
Turn-Off Time
t d(on)
t r
t d(off)
t f
V DD = - 4 V, R L = 4 Ω
I D ? - 1.0 A, V GEN = - 4.5 V, R G = 6 Ω
13
25
55
19
20
40
80
35
ns
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 μs, duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 70833
S09-0133-Rev. E, 02-Feb-09
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